|Spintronic Devices||Hours: 3 0 3|
Introduction of spin electronics, principle of spintronic devices, selection of materials for spin devices including ferromagents and interface materials, current-in-plane (CIP) and current perpendicular-to-plane (CPP) spin valve devices, magnetic tunnel junctions, types of magnetoresistance (MR): anisotropic magnetoresistance (AMR), giant magnetoresistance (GMR), colossal magnetoresistance (CMR) and tunneling magnetoresistance (TMR), applications of two-dimensional (2D) materials i.e. graphene, hexagonal boron nitrite, various transition metal dichalcogenides and organic materials for spintronic devices, spin valve device fabrication techniques for 2D materials and their van der Waals heterostructures, structural characterization and magnetotransport of spin valve devices, temperature dependence of junction resistance and magnetotransport in spin valve devices, spin injection, spin tunneling process, spin accumulation, spin diffusion length, two, three and four terminal lateral spintronic devices, spin field effect transistor, hybrid electronics, spin transport in semiconductors, spintronics for next generation innovative devices.
|Pre-requisites: None||Co-requisites: None|
Hours: XYZ where X = Lecture, Y = Lab, Z = Credit
All hours are per week.
3 Lab hours constitute 1 credit hour
1 credit hour implies 1 lecture of 50mins per academic week. 16 weeks in total.
Pre-Requisite courses are courses required to be completed before this course may be taken
Co-Requisite courses are courses required to be taken along with this course