Semiconductor Device Processing and Technology
| Hours: 3 0 3 |
|---|
Crystal growth and melt; epitaxial growth; oxide growth mechanism and kinetics; oxidation techniques and systems; oxidation induced defects; optical lithography; electron beam lithography; ion beam lithography; wet etching; RIE mechanism and techniques; diffusion mechanism in solids; diffusion enhancement and retardation; ion implantation and range theory; formation of shallow junctions by ion beam; metallization; GaAs device processing; measurements and characteristics of device parameters; VLSI process integration.
| Pre-requisites: none | Co-requisites: none |
|---|
Hours: XYZ where X = Lecture, Y = Lab, Z = Credit
All hours are per week.
3 Lab hours constitute 1 credit hour
1 credit hour implies 1 lecture of 50mins per academic week. 16 weeks in total.
Pre-Requisite courses are courses required to be completed before this course may be taken
Co-Requisite courses are courses required to be taken along with this course
